| PART |
Description |
Maker |
| 2SC5315 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications (fT=16 GHz series)
|
TOSHIBA
|
| ATF-10236 ATF-10236-STR ATF-10236-TR1 ATF10236 |
ER 2C 2#16S PIN RECP BOX
0.5?12 GHz Low Noise Gallium Arsenide FET
0.5-12 GHz Low Noise Gallium Arsenide FET
0.512 GHz Low Noise Gallium Arsenide FET
|
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| NTE2403 NTE2402 |
Silicon complementary PNP transistor. Low noise, UNF/VNF amplifier.
Silicon Complementary Transistors Low Noise, UHF/VHF Amplifier
Silicon Complementary Transistors Low Noise / UHF/VHF Amplifier
|
NTE[NTE Electronics]
|
| CFY77 CFY77-08 CFY77-10 Q62702-F1559 Q62702-F1549 |
From old datasheet system
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| MGA-665P8-BLK MGA-665P8-TR1 MGA-665P8 MGA-665P8-TR |
GaAs Enhancement-Mode PHEMT 0.5 6 GHz Low Noise Amplifier GaAs增强型PHEMT.56 GHz的低噪声放大
GaAs Enhancement-Mode PHEMT 0.5 - 6 GHz Low Noise Amplifier
From old datasheet system
MGA-665P8 · MGA-665P8 0.5-6GHz Low Noise Amplifier
|
Avago Technologies, Ltd.
Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
|
| MT3S111 |
VHF-UHF Low-Noise, Low-Distortion Amplifier Applications
|
Toshiba Semiconductor
|
| TLT-13-6015 TLT-13-6014 |
Temperature Compensated Low Noise Amplifier 6 GHz - 13 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| PE15A1004 |
3 dB NF, 13 dBm, 12 GHz to 18 GHz, Low Noise Amplifier
|
Pasternack Enterprises, Inc.
|
| 2SC5536A |
VHF Low-Noise Amplifier, OSC Applications
|
Sanyo Semicon Device
|
| MT3S107FS |
VHF-SHF Low Noise Amplifier Application
|
Toshiba Semiconductor
|
| MT3S06T |
VHF~UHF Band Low Noise Amplifier Applications
|
Toshiba Semiconductor
|
